SIHFZ48S Datasheet | Vishay

FEATURES - Advanced process technology - Surface-mount (IRFZ48S, Si HFZ48S) - Low-profile through-hole (Si HFZ48L) - 175 °C operating temperature Available - Fast switching - Material categorization: for definitions of Available pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK (TO-263) is a surface-mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263)is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface-mount application. The through-hole version (Si HFZ48L) is available for low-profile applications. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) Si HFZ48S-GE3 IRFZ48SPb F IRFZ48STRLPb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current f Pulsed drain current a, e Linear derating factor Single pulse avalanche energy b, e Maximum power dissipation Peak diode recovery dv/dt c, e VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C TA = 25 °C VDS VGS ID IDM EAS PD dv/dt Operating junction and storage temperature range Soldering...