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SIHFZ48S Datasheet Power MOSFET

Manufacturer: Vishay

Overview: .vishay. IRFZ48S, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-263) S GD D G S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 110 29 36 Single 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, bined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK (TO-263) is a surface-mount power package capable of acmodating die sizes up to HEX-4.

Key Features

  • Advanced process technology.
  • Surface-mount (IRFZ48S, SiHFZ48S).
  • Low-profile through-hole (SiHFZ48L).
  • 175 °C operating temperature Available.
  • Fast switching.
  • Material categorization: for definitions of Available compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are.

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Brand Logo Part Number Description Manufacturer
Vishay Logo SIHFZ48 Power MOSFET Vishay

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