SIHFZ48L
Description
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Key Features
- Advanced process technology
- Surface-mount (IRFZ48S, SiHFZ48S)
- Low-profile through-hole (SiHFZ48L)
- 175 °C operating temperature Available
- Fast switching
- Material categorization: for definitions of Available compliance please see Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
