Datasheet4U Logo Datasheet4U.com

SiHFBG20 - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to ap

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • Fast switching.
  • Ease of paralleling Available RoHS.

📥 Download Datasheet

Full PDF Text Transcription for SiHFBG20 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFBG20. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 1000 VGS = 10 V 11 38 4.9 ...

View more extracted text
g max. (nC) Qgs (nC) Qgd (nC) Configuration 1000 VGS = 10 V 11 38 4.9 22 Single D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling Available RoHS* COMPLIANT • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.