Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to ap
Full PDF Text Transcription for SiHFBG20 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SiHFBG20. For precise diagrams, and layout, please refer to the original PDF.
g max. (nC) Qgs (nC) Qgd (nC) Configuration 1000 VGS = 10 V 11 38 4.9 22 Single D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling Available RoHS* COMPLIANT • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.