SiHFBG20 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - Fast switching - Ease of paralleling Available Ro HS- PLIANT - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non-Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFBG20Pb F Si HFBG20-E3 IRFBG20 Si HFBG20 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery d V/dt c TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 193 μH, Rg = 25 , IAS = 1.4 A (see fig. 12). c. ISD  1.4 A, d I/dt  60 A/μs, VDD  600, TJ  150 °C. d. 1.6 mm from case. LIMIT 1000 ± 20 1.4 0.86 5.6 0.43 200 1.4 5.4 54 1.0 -55 to +150 300 10 1.1 UNIT...