SiHFP31N50L Datasheet | Vishay

FEATURES - Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Available - Lower Gate Charge Results in Simpler Drive Ro HS- Requirements PLIANT - Enhanced d V/dt Capabilities Offer Improved Ruggedness - Higher Gate Voltage Threshold Offers Improved Noise Immunity - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Zero Voltage Switching SMPS - Tele and Server Power Supplies - Uninterruptible Power Supplies - Motor Control Applications TO-247AC IRFP31N50LPb F Si HFP31N50L-E3 IRFP31N50L Si HFP31N50L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1 m H, Rg = 25 , IAS = 31 A (see fig. 12). c. ISD  31 A, d I/dt  422 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 500 ± 30 31 20 124 3.7 460 31 46 460 19 - 55 to + 150 300d 10...