SiHFP32N50K Datasheet | Vishay

FEATURES 500 0.135 - Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness Available - Improved Gate, Avalanche and Dynamic d V/dt Ro HS- PLIANT - Fully Characterized Capacitance and Avalanche Voltage and Current - Low RDS(on) - Lead (Pb)-free Available .. TO-247 APPLICATIONS - Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply S N-Channel MOSFET - High Speed Power Switching - Hard Switching and High Frequency Circuits ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-247 IRFP32N50KPb F Si HFP32N50K-E3 IRFP32N50K Si HFP32N50K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc for 10 s 6-32 or M3 screw Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque TC = 25 °C EAS IAR EAR PD d V/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 32 20 130 3.7 450 32 46 460 13 - 55 to + 150 300d 10 1.1 W/°C m J A m J W V/ns °C lbf - in N- m A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 0.87 m H, RG = 25 Ω, IAS = 32 A. c. ISD ≤ 32 A, d I/dt ≤ 197 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may applyrom case. Document Number: 91221 S-81361-Rev. B, 07-Jul-08 .vishay. 1 IRFP32N50K, Si HFP32N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL Rth JA Rth CS Rth JC TYP. 0.24 MAX. 40 0.26 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static .. Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage...