SiHFP344 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Isolated Central Mounting Hole - Fast Switching - Ease of Paralleling - Simple Drive Requirements - Lead (Pb)-free Ro HS PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247 IRFP344Pb F Si HFP344-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 8.1 m H, RG = 25 Ω, IAS = 9.5 A (see fig. 12). c. ISD ≤ 9.5 A, d I/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 450 ± 20 9.5 6.0 38 1.2 410 9.5 15 150 3.5 - 55 to + 150 300d 10 1.1 UNIT V W/°C m J A m J W V/ns °C lbf - in N- m Document Number: 91223 S09-0006-Rev. A, 19-Jan-09 .vishay....