SiHFP340 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating 400 0.55 - Repetitive Avalanche Rated - Isolated Central Mounting Hole - Fast Switching - Ease of Paralleling - Simple Drive Requirements - Lead (Pb)-free Available Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247 S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-247 IRFP340Pb F Si HFP340-E3 IRFP340 Si HFP340 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg LIMIT 400 ± 20 11 6.9 44 1.2 480 11 15 150 4.0 - 55 to + 150 300d 10 1.1 UNIT V A W/°C m J A m J W V/ns °C lbf - in N- m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 6.9 m H, RG = 25 Ω, IAS = 11 A (see fig. 12). c. ISD ≤ 11 A, d I/dt ≤ 120 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91222 S-Pending-Rev. A, 16-Jun-08 .vishay. 1 WORK-IN-PROGRESS IRFP340, Si...