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TSHG8200 Datasheet High Speed Infrared Emitting Diode

Manufacturer: Vishay

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General Description

TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

in APPLICATIONS • Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission • Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSHG8200 Ie (mW/sr) 180 ϕ (deg) ± 10 λP (nm) 830 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHG8200 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 84755 Rev.

1.2, 02-Jul-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ TEST CONDITION SYMBOL VR IF VALUE 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 µs tp = 100 µs IFM IFSM PV Tj Tamb Tstg t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB Tsd RthJA www.D

Overview

www.DataSheet.co.kr TSHG8200 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double.

Key Features

  • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC an.

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