TSHG8200 Datasheet | Vishay

.Data Sheet.co.kr Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, Ga Al As Double Hetero Features - - - - - - - - - - - - - Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras pliant to Ro HS directive 2002/95/EC and accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition 94 8389 DESCRIPTION TSHG8200 is an infrared, 830 nm emitting diode in Ga Al As double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. in APPLICATIONS - Infrared radiation source for operation with CMOS cameras (illumination) - High speed IR data transmission - Smoke-automatic fire detectors PRODUCT SUMMARY PONENT TSHG8200 Ie (m W/sr) 180 ϕ (deg) ± 10 λP (nm) 830 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHG8200 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM...