SI2392ADS
SI2392ADS is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization: For definitions of pliance .vishay./doc?99912 please see
APPLICATIONS
- DC/DC converters / boost converters
- Load switch
- LED backlighting in LCD TVs
- Power management for mobile puting
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT 100 ± 20 3.1 2.5
2.2 b, c 1.8 b, c
8 2.1 1 b, c 3 0.45 2.5 1.6 1.25 b, c 0.8 b, c -55 to 150
UNIT V
A m J W °C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b, d t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166...
