Si2392DS
Si2392DS is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Power MOSFET
- 100 % Rg and UIS Tested
- Material categorization:
For definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- DC/DC Converters / Boost Converters
- Load Switch
- LED Backlighting in LCD TVs
- Power Management for Mobile puting
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 m H
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain)
5 s Steady...
