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Si2392BDS - N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number Si2392BDS
Manufacturer Vishay
File Size 136.54 KB
Description N-Channel MOSFET
Datasheet download datasheet Si2392BDS Datasheet

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Full PDF Text Transcription

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www.vishay.com Si2392BDS Vishay Siliconix N-Channel 100 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: H1 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 2 S 100 0.149 0.180 2.2 2.3 Single FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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