Si2392BDS
Si2392BDS is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen IV power MOSFET
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- DC/DC converters / boost converters
- Load switch
- LED backlighting in LCD TVs
- Power management for mobile puting
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
SOT-23 Si2392BDS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 300 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT 100 ± 20 2.3 1.8
2.0 b, c 1.6 b, c
6 1.4 1 b, c 4 0.8 1.7 1.1 1.25 b, c 0.8 b, c -55 to +150
UNIT V
A m J W °C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, d...
