SISS98DN Datasheet | Vishay

FEATURES - Thunder FET® power MOSFET - Optimized Qg and Qoss improve efficiency - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Primary side switching - Synchronous rectification - DC/DC converter - Motor drive control S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Alternate manufacturing location Power PAK 1212-8S Si SS98DN-T1-GE3 Si SS98DN-T1-BE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS IDM IS IAS EAS TJ, Tstg LIMIT 200 ± 20 14.1 11.2 4.1 b, c 3.2 b, c 30 14.1 4.3 b, c 10 5 57 36 4.8 b, c 3 b, c -55 to +150 260 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady...