Datasheet4U Logo Datasheet4U.com

SiSS92DN - N-Channel 250V MOSFET

Features

  • TrenchFET® with ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss.
  • Leadership RDS(on) and RDS-Coss FOM.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – SiSS92DN

Datasheet Details

Part number SiSS92DN
Manufacturer Vishay
File Size 221.76 KB
Description N-Channel 250V MOSFET
Datasheet download datasheet SiSS92DN Datasheet
Additional preview pages of the SiSS92DN datasheet.

📁 Similar Datasheet

  • SISS27DN-T1-GE3 - 30V P-Channel MOSFET (Kexin)
  • SIS0100 - Black and White Image Sensor Camera Module (Sanyo Semicon Device)
  • SiS1057 - JFET Operational Amplifier (Silicon Supplies)
  • SIS23C128 - 16K x 8 CMOS Mask ROM (Silicon Integrated Systems)
  • SIS23C128A - 16K x 8 CMOS Mask ROM (Silicon Integrated Systems)
  • SIS23C256 - CMOS MASK ROM (ETC)
  • SIS23C256A - CMOS MASK ROM (ETC)
  • SIS23C32 - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
  • SIS23C32A - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
  • SIS23C33 - (SIS23C32 / SIS23C33) 4K x 8 CMOS MASK ROM (Silicon Integrated Systems)
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
www.vishay.com SiSS92DN Vishay Siliconix N-Channel 250 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 250 0.173 0.190 8.1 12.3 Single FEATURES • TrenchFET® with ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss • Leadership RDS(on) and RDS-Coss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
Published: |