Click to expand full text
P-Channel 20-V (D-S) MOSFET
Si6473DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0125 at VGS = - 4.5 V - 20 0.016 at VGS = - 2.5 V
0.0215 at VGS = - 1.8 V
ID (A) - 9.5 - 8.5 - 7.3
FEATURES • Halogen-free • TrenchFET® Power MOSFETs
S*
RoHS
COMPLIANT
TSSOP-8
D1 S2 S3 G4
Si6473DQ
8D 7S 6S 5D
Top View Ordering Information: Si6473DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G * Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 9.5 - 5.9
- 6.2 - 4.
Si6473DQ Datasheet
