SiSH114ADN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.0075 0.0098 10.2 35 a, g Single.
SiSH114ADN Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization: