SiSH434DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 40 0.0076 0.0092 12.5 35 a Single.
SiSH434DN Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance .vishay./doc?99912