SiSH615ADN Description
() at VGS = -10 V RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V Qg typ.
SiSH615ADN Key Features
- TrenchFET® Gen III p-channel power MOSFET
- 100 % Rg and UIS tested
- Material categorization: For definitions of pliance .vishay./doc?99912