SiSH625DN Description
() at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration 4 3 S 2 S 1 S G Bottom View -30 0.0070 0.0110 39.5 -35 d Single.
SiSH625DN Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization: