SiSH617DN Description
() at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) d, g Configuration 1 4 3 S 2 S S G Bottom View -30 0.0123 0.0222 20.5 -35 Single.
SiSH617DN Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization: