Vishay VBT3045C
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
| Part No. | VBT3045C |
|---|---|
| Datasheet | VBT3045C Download |
| Manufacturer |  Vishay |
| Description | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Trench MOS Schottky technology● Low forward voltage drop, low power losses
● High efficiency operation
● Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
● Material categorization: for definitions of compliance please see
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 45 V 200 A 0.39 V 150 °C D2PAK (TO-263AB) Circuit configuration Common cathodeMECHANICAL DATA
Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
