• Part: VBT30L60C
  • Description: Dual Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 96.89 KB
Download VBT30L60C Datasheet PDF
Vishay
VBT30L60C
VBT30L60C is Dual Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay. Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® D2PAK (TO-263AB) PIN 1 PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 60 V IFSM 200 A VF at IF = 15 A 0.45 V TJ max. Package Circuit configuration 150 °C D2PAK (TO-263AB) mon cathode Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available - Not remended for PCB bottom side wave...