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VBT30L60C Datasheet Dual Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: .vishay. VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® D2PAK (TO-263AB) K 2 1 VBT30L60C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 60 V IFSM 200 A VF at IF = 15 A 0.45 V TJ max.

Datasheet Details

Part number VBT30L60C
Manufacturer Vishay
File Size 96.89 KB
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet VBT30L60C_Vishay.pdf

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available.
  • Not recommended for PCB bottom side wave mounting.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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VBT30L60C Distributor