SI3447BDV Description
P-Channel 12-V (D-S) MOSFET Si3447BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) 0.040 at VGS = - 4.5 V 0.053 at VGS = - 2.5 V 0.072 at VGS = - 1.8 V ID (A) - 6.0 - 5.2.
SI3447BDV Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET: 1.8 V Rated
- Ultra Low On-Resistance
- pliant to RoHS Directive 2002/95/EC