VM3001 Datasheet | Viva Electronics

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration D D DD D D DD S SSG G GS S S 30V N-Channel MOSFETs BVDSS 30V RDSON 1.2mΩ ID 260A Features - 30V, 260A, RDS(ON) =1.2mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - Networking - Load Switch - LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) Power Dissipation - Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Characteristics Symbol RθJA RθJC Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to Case Rating 30 ±20 260 166 1040 845 130 169 1.35 -55 to 150 -55 to 150 Units V V A A A m J A...