VM3005 Datasheet | Viva Electronics

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. DFN2x2-6L 2EP Pin Configuration D DD S S S DD D 30V N-Channel MOSFETs BVDSS RDSON 30V 19mΩ 8A Features - 30V,8A, RDS(ON) =19mΩ @VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - MB / VGA / Vcore - POL Applications - SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TA=25℃) Drain Current - Continuous (TA=70℃) Drain Current - Pulsed1 Power Dissipation (TA=25℃) Power Dissipation - Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating 30 ±20 8 6.4 32 2 16.1 -55 to 150 -55 to 150 Units V V A A A W m W/℃ ℃ ℃ Thermal Characteristics Symbol RθJA Parameter Thermal Resistance Junction to...