VM3005 - 30V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

30V,8A, RDS(ON) =19mΩ @VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

📥 Download Datasheet

VM3005 30v n-channel mosfet by Viva Electronics - Datasheet Preview

Datasheet Details

Part number	VM3005
Manufacturer	Viva Electronics
File Size	700.66 KB
Description	30V N-Channel MOSFET
Datasheet	VM3005 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
VM3500	READ/WRITE PREAMPLIFIER	VTC

Other Datasheets by Viva Electronics

Part Number	Description
VM3001	30V N-Channel MOSFET
VM3003	30V Dual N-Channel MOSFET
VM3004	30V N-Channel MOSFET
VM3007	30V N-Channel MOSFET
VM3008	30V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

VM3005 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.