VM3008 Datasheet | Viva Electronics

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Q2 performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Asymmetric Dual Pin Configuration S1/D2 G2 S1/D2 G2 Pin1 G1 S1/D2 D1 S2 D1 G1 G1 S1/D2 D1 G2 S1 BVDSS 30V 30V RDSON 3.3mΩ 0.7mΩ ID 60A 210A Features - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available D2 Applications - MB / VGA / Vcore - POL Buck Applications - SMPS 2nd SR S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) Power Dissipation - Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Characteristics Symbol...