Viva Electronics VM3003
This Q1 advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Q2 performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | VM3003 |
|---|---|
| Datasheet | VM3003 Download |
| Manufacturer | Viva Electronics |
| Description | 30V Dual N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. DFN3x3 Asymmetric Dual Pin Configuration S2 S2 G2S2 S2 S2 S2 G2 D1 D2 S1/D2 G1 G2 D1 D1 D1 G1D1 D1 D1 D1 G1 S1 S2 BVDSS RDSON ID 30V 6.8mΩ 40A 30V 6.8mΩ 40AFEATURES
● Improved dv/dt capability● Fast switching
● 100% EAS Guaranteed
● Green Device Available
● ESD Protection Embedded
APPLICATIONS
● MB / VGA / Vcore● POL Buck
APPLICATIONS
● SMPS 2nd SRABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Characteristi...
