VM3003 Datasheet | Viva Electronics

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Q2 performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. DFN3x3 Asymmetric Dual Pin Configuration S2 S2 G2S2 S2 S2 S2 G2 D1 D2 S1/D2 G1 G2 D1 D1 D1 G1D1 D1 D1 D1 G1 S1 S2 BVDSS RDSON 30V 6.8mΩ 40A 30V 6.8mΩ 40A Features - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available - ESD Protection Embedded Applications - MB / VGA / Vcore - POL Buck Applications - SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS...