VM3003 - 30V Dual N-Channel MOSFET

General Description

transistors are using trench DMOS technology.

Key Features

Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.
ESD Protection Embedded.

VM3003 30v dual n-channel mosfet by Viva Electronics - Datasheet Preview

Datasheet Details

Part number	VM3003
Manufacturer	Viva Electronics
File Size	646.00 KB
Description	30V Dual N-Channel MOSFET
Datasheet	VM3003 Datasheet

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VM3001	30V N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VM3003 30V Dual N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This Q1 advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Q2 performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN3x3 Asymmetric Dual Pin Configuration S2 S2 G2S2 S2 S2 S2 G2 D1 D2 S1/D2 G1 G2 D1 D1 D1 G1D1 D1 D1 D1 G1 S1 S2 BVDSS RDSON ID 30V 6.8mΩ 40A 30V 6.