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VM3007 - 30V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,50A, RDS(ON) =5.9mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • 1.5kV HBM ESD Capability.

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Datasheet Details

Part number VM3007
Manufacturer Viva Electronics
File Size 653.23 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet VM3007 Datasheet

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Full PDF Text Transcription

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VM3007 30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration D DDDD G S SSG S BVDSS RDSON ID 30V 5.9mΩ 50A Features  30V,50A, RDS(ON) =5.9mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available  1.
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