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VM3009 - 30V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,35A, RDS(ON) =12mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number VM3009
Manufacturer Viva Electronics
File Size 774.76 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet VM3009 Datasheet

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Other Datasheets by Viva Electronics

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VM3001 30V N-Channel MOSFET
VM3003 30V Dual N-Channel MOSFET
VM3004 30V N-Channel MOSFET
VM3005 30V N-Channel MOSFET
VM3007 30V N-Channel MOSFET

Full PDF Text Transcription

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VM3009 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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