Viva Electronics VM3009
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | VM3009 |
|---|---|
| Datasheet | VM3009 Download |
| Manufacturer | Viva Electronics |
| Description | 30V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. PPAK3X3 Pin Configuration D DDDD S S SG G S 30V N-Channel MOSFETs BVDSS RDSON ID 30V 12mΩ 35AFEATURES
● 30V,35A, RDS(ON) =12mΩ@VGS = 10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● MB / VGA / Vcore● POL
APPLICATIONS
● SMPS 2nd SRABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanched Current2 Power Dissipation (TC=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating 30 ±20 35 22 140 13 16 27 0.21 -55 to 150 -55 to 150 Units V V A A A mJ A W W/℃ ℃ ℃ Thermal Characteristics Symbol RθJA RθJC Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to Case Typ. ----- Max.
