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VM4001 - 40V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V,170A, RDS(ON) =2.4mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number VM4001
Manufacturer Viva Electronics
File Size 614.29 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet VM4001 Datasheet

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Full PDF Text Transcription

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VM4001 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D G S GD S 40V N-Channel MOSFETs BVDSS 40V RDSON 2.4mΩ ID 170A Features  40V,170A, RDS(ON) =2.
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