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VM4002 - 40V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V,40A, RDS(ON) =13.8mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet preview – VM4002

Datasheet Details

Part number VM4002
Manufacturer Viva Electronics
File Size 612.53 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet VM4002 Datasheet
Additional preview pages of the VM4002 datasheet.

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Full PDF Text Transcription

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VM4002 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration D D D DD D D DD S SSG G GS S S S 40V N-Channel MOSFETs BVDSS RDSON ID 40V 13.8mΩ 40A Features  40V,40A, RDS(ON) =13.
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