VM4003 Datasheet | Viva Electronics

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration D DDDD S SSG 40V N-Channel MOSFETs BVDSS RDSON 40V 9mΩ 35A Features - 40V, 35A, RDS(ON)=9mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - Green Device Available Applications - Notebook - Load Switch - LED applications - Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) Power Dissipation - Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating 40 ±20 35 22.1 140 76 39 44 0.36 -55 to 150 -55 to 150 Units V V A A A m J A W W/℃ ℃ ℃ Thermal Characteristics Symbol RθJA...