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VM4005 - 40V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V,200A, RDS(ON) =1.7mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number VM4005
Manufacturer Viva Electronics
File Size 597.04 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet VM4005 Datasheet

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VM4001 40V N-Channel MOSFET
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VM4003 40V N-Channel MOSFET
VM4004 40V N-Channel MOSFET

Full PDF Text Transcription

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VM4005 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration D D D DD D D DD S SSG G GS S S S 40V N-Channel MOSFETs BVDSS 40V RDSON 1.7mΩ ID 200A Features  40V,200A, RDS(ON) =1.
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