Viva Electronics VM4004
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. PPAK5X6 Pin Configuration D D D DD D D DD S SSG G GS S S S 40V N-Channel MOSFETs BVDSS RDSON ID 40V 5.5mΩ 90AFEATURES
● 40V, 90A, RDS(ON)=5.5mΩ@VGS = 10V● Improved dv/dt capability
● Fast switching
● Green Device Available
APPLICATIONS
● Notebook● Load Switch
● LED applications
● Hand-Held Device
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating 40 ±20 90 57 360 83 0.67 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Characteristics Symbol RθJA RθJC Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to Case Typ. ----- Max.