Datasheet Summary
2N60
Surface Mount N-Channel Power MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT 2 AMPERES
Description:
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
2 DRAIN
Features
:
- 2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V
- Low gate charge
- Low Crss
1 GATE
- Fast switching
- Improved dv/dt capability
3 SOURCE
DRAIN SOURCE VOLTAGE 600 VOLTAGE
D-PAK3/(TO-251) D-PAK/(TO-252)
TO-220...
