2N60P Description
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
2N60P Key Features
- 2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
- (Note 1)
- (Note 1)
- Drain current limited by maximum junction temperature
- Gate Threshold Voltage @VDS=VGS,ID=250μA
- Gate-Source Leakage current Forward@VGS=30V,VDS=0V ReVerse@VGS=-30V,VDS=0V