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RoHS 1SS181
SOT-23 Plastic-Encapsulate DIODE
Features
DPower dissipation PD : 150 mW (Tamb=25oC)
TForward Current .,LIF : 100 mA
Reverse Voltage VR : 80V
Operating and storage junction temperature range
OTj, Tstg : -55 oC to +150oC
1
1.
2.4 1.3
SOT-23
3
2
NIC CMarking:A3
2.9 1.9 0.95 0.95 0.4
Unit:mm
TROELECTRICAL CHARACTERISTICS o
(Ta=25 C unless otherwise specified)
CParameter
Symbol
EReverse breakdown voltage
V(BR)
LReverse Voltage leakage current
IR
EForward Voltage
Diode Capacitance
WEJReverse Recovery Time
VF Ctot trr
Test Condition
IR=100 A
VR=80V
IF=100mA
VR=0V f=1MHz IF=IR=10mA Irr=0.1IR
MIN. MAX. Unit
80 V 0.5 A 1.2 V 4 pF 4 nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.
1SS181 Datasheet
