BCX52 - PNP Transistor

WEJ

Key Features

TPower dissipation PCM: . ,LCollector current 0.5 ICM: -1 Collector-base voltage V(BR)CBO: -60 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2.

BCX52 pnp transistor by WEJ - Datasheet Preview

Datasheet Details

Part number	BCX52
Manufacturer	WEJ
File Size	144.14 KB
Description	PNP Transistor
Datasheet	BCX52 Datasheet

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Part Number	Description
BCX51	PNP TRANSISTOR
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Full PDF Text Transcription (Reference)

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RoHS BCX52 BCX52 TRANSISTOR (PNP) DFEATURES TPower dissipation PCM: .,LCollector current 0.5 ICM: -1 Collector-base voltage V(BR)CBO: -60 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage Collector cut-off current TEmitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=-100µA , IE=0 IC=-10mA , IB=0 IE=-10µA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 MIN MAX UNIT -60 V -60 V -5 V -0.1 µA -0.