WEJ BCX52
PNP Transistor
RoHS BCX52 BCX52 TRANSISTOR (PNP) DFEATURES TPower dissipation PCM: .,LCollector current 0.5 ICM: -1 Collector-base voltage V(BR)CBO: -60 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage Collector cut-off current TEmitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=-100µA , IE=0 IC=-10mA , IB=0 IE=-10µA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 MIN MAX UNIT -60 V -60 V -5 V -0.1 µA -0.1 µA LECDC current gain BCX52 BCX52-10 BCX52-16 ECollector-emitter saturation voltage JBase-emitter voltage WETransition frequency hFE(1) hFE(2) hFE(3) VCE(sat) VBE(ON) VCE=-2V, IC=-150mA VCE=-2V, IC= -5mA VCE=-2V, IC=-500mA IC=-500 mA, IB=-50mA IC=- 500mA, VCE=-2V 63 63 100 63 40 250 160 250 -0.5 -1 V V VCE= -5V, IC= -10mA fT f = 100MHz 50 MHz DEVICE MARKING BCX52=AE BCX52-10=AG BCX52-16=AM WEJ ELECTRONIC CO.