WEJ BCX55
NPN Transistor
| Part No. | BCX55 |
|---|---|
| Datasheet | BCX55 Download |
| Manufacturer |  WEJ |
| Description | NPN Transistor |
| Buy | Stock & Price |
RoHS BCX55 BCX55 TRANSISTOR (NPN) DFEATURES TPower dissipation PCM: .,LCollector current ICM: Collector-base voltage V(BR)CBO: 0.5 1 60 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage Collector cut-off current TEmitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=100µA, IE=0 IC= 10mA , IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=5 V, IC=0 MIN MAX UNIT 60 V 60 V 5V 0.1 µA 0.1 µA LECDC current gain BCX55 BCX55-10 BCX55-16 ECollector-emitter saturation voltage JBase-emitter voltage WETransition frequency hFE(1) VCE=2V, IC= 150mA 63 250 63 160 100 250 hFE(2) hFE(3) VCE=2V, IC= 5mA VCE=2V, IC= 500mA 40 25 VCE(sat) IC=500 mA, IB= 50mA 0.5 VBE(ON) IC= 500 mA, VCE=2V 1 V V VCE= 10V, IC= 50mA fT f = 100MHz 130 MHz DEVICE MARKING BCX55=BE BCX55-10=BG BCX55-16=BM WEJ ELECTRONIC CO.