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RoHS BCX55
BCX55 TRANSISTOR (NPN)
DFEATURES TPower dissipation
PCM:
.,LCollector current ICM: Collector-base voltage
V(BR)CBO:
0.5 1 60
W (Tamb=25℃) A V
OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage
Collector cut-off current
TEmitter cut-off current
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO
Test conditions Ic=100µA, IE=0 IC= 10mA , IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=5 V, IC=0
MIN MAX UNIT 60 V 60 V 5V
0.1 µA 0.
BCX55 Datasheet