BCX56 - NPN Transistor

WEJ

Key Features

TPower dissipation PCM: . ,LCollector current 0.5 ICM: 1 Collector-base voltage V(BR)CBO: 100 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2.

BCX56 npn transistor by WEJ - Datasheet Preview

Datasheet Details

Part number	BCX56
Manufacturer	WEJ
File Size	137.75 KB
Description	NPN Transistor
Datasheet	BCX56 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BCX56	NPN Silicon AF Transistor	Multicomp
BCX56	Silicon NPN transistor	BLUE ROCKET ELECTRONICS
BCX56	NPN medium power transistors	NXP
BCX56	SURFACE MOUNT NPN SILICON TRANSISTOR	Central Semiconductor Corp
BCX56	NPN Silicon AF Transistors	Infineon Technologies AG

Other Datasheets by WEJ

Part Number	Description
BCX51	PNP TRANSISTOR
BCX52	PNP Transistor
BCX54	NPN Transistor
BCX55	NPN Transistor
BCX20LT1	NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

RoHS BCX56 BCX56 TRANSISTOR (NPN) DFEATURES TPower dissipation PCM: .,LCollector current 0.5 ICM: 1 Collector-base voltage V(BR)CBO: 100 W (Tamb=25℃) A V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage Collector cut-off current TEmitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic=100µA, IE=0 IC= 10mA , IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 MIN MAX UNIT 100 V 80 V 5V 0.1 µA 0.