| Part Number | BCX56 |
|---|---|
| Manufacturer | Rectron |
| Overview | only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not. 1. Complementary to BCX51,BCX52,BCX53 2. Power Dissipation of 500mW 3. High Stability and High Reliability SOT-89 Maximum Ratings & Thermal Characteristics ( Ratings at 25ć ambient temperature unless otherwise specified.) Parameters Symbol TYPE Unit BCX54 45 V Collector-Base Voltage VCBO . |
BCX56 Datasheet
The BCX56 is a NPN TRANSISTOR.
| Part Number | BCX56 |
|---|---|
| Description | NPN Silicon AF Transistors |
| Manufacturer | Galaxy Microelectronics |
| Overview |
NPN Silicon AF Transistors
FEATURES
For AF driver and output stages High collector current Low collector-emitter saturation voltage
Pb
Lead-free
Complementary types: BCX51…BCX53(PNP)
Prod.
* For AF driver and output stages * High collector current * Low collector-emitter saturation voltage Pb Lead-free * Complementary types: BCX51…BCX53(PNP) Production specification BCX54/BCX55/BCX56 ORDERING INFORMATION Type No. Marking SOT-89 Package Code BCX54 BCX54-10 BCX54-16 BCX55 BA B. |
| Part Number | BCX56 |
|---|---|
| Description | 1A 80V NPN TRANSISTORS |
| Manufacturer | AiT Semiconductor |
| Overview |
FEATURE
The BCX56, BCX56-10L, BCX56-16L are available High current (max. 1A)
in SOT89-3 package.
Low voltage (max. 80V)
NPN Transistors
ORDERING INFORMATION
APPLICATIONS
Package Type
Pa.
The BCX56, BCX56-10L, BCX56-16L are available * High current (max. 1A) in SOT89-3 package. * Low voltage (max. 80V) * NPN Transistors ORDERING INFORMATION APPLICATIONS Package Type Part Number BCX56 SOT89-3 BCX56-10L BCX56-16L Note SPQ: 1,000pcs/Reel AiT provides all RoHS Compliant Pr. |
| Part Number | BCX56 |
|---|---|
| Description | SURFACE MOUNT NPN SILICON TRANSISTOR |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current ge. rwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX ICBO ICBO IEBO BVCBO BVCBO BVCBO BVCEO BVCEO BVCEO VCE(SAT) VBE(ON) hFE hFE hFE VCB=30V 100 VCB=30V, TA=125°C 10 VEB=5.0V 100 IC=100µA (BCX54) 45 IC=100µA (BCX55) 60 IC=100µA (BCX56) 100 IC=10mA (BCX54) 45 IC=10mA. |