WG50N65LAW1
Description
WG50N65LAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low VCE(sat), and minimal switching performance.
Key Features
- Maximum junction temperature 175 °C
- Positive Temperature efficient for Easy Parallel Operating
- Very soft, fast recovery anti-parallel diode
- Low saturation Voltage VCE(sat) = 1.3 V(Typ.) @ IC = 50 A
- EMI Improved Design
Applications
- Solar Converters
