WG50N65LAW1 Overview
WG50N65LAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low VCE(sat), and minimal switching performance. This device is ideal for low switching frequency power conversion applications.
WG50N65LAW1 Key Features
- Maximum junction temperature 175 °C
- Positive Temperature efficient for Easy Parallel Operating
- Very soft, fast recovery anti-parallel diode
- Low saturation Voltage VCE(sat) = 1.3 V(Typ.) @ IC = 50 A
- EMI Improved Design