WG50N65LAW1 - IGBT

Description

WG50N65LAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low VCE(sat), and minimal switching performance.

This device is ideal for low switching frequency power conversion applications.

Features

Maximum junction temperature 175 °C.
Positive Temperature efficient for Easy Parallel Operating.
Very soft, fast recovery anti-parallel diode.
Low saturation Voltage VCE(sat) = 1.3 V(Typ. ) @ IC = 50 A.
EMI Improved Design 3.

WeEn

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Datasheet Details

Part number	WG50N65LAW1
Manufacturer	WeEn
File Size	869.98 KB
Description	IGBT
Datasheet	WG50N65LAW1 Datasheet
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WG50N65LAW1 IGBT Rev.01 - 27 September 2023 Product data sheet 1. General description WG50N65LAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low VCE(sat), and minimal switching performance. This device is ideal for low switching frequency power conversion applications. RoHS halogen-Free 2. Features and benefits • Maximum junction temperature 175 °C • Positive Temperature efficient for Easy Parallel Operating • Very soft, fast recovery anti-parallel diode • Low saturation Voltage VCE(sat) = 1.3 V(Typ.) @ IC = 50 A • EMI Improved Design 3. Applications • Solar Converters • UPS, ESS • PFC • Converters 4. Quick reference data Table 1.

Published: Apr 24, 2024 |