WG50N65LDJ1
Description
WG50N65LDJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance.
Key Features
- Positive Temperature efficient for Easy Parallel Operating
- High Current Capability
- Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A
- EMI Improved Design
Applications
- Solar Inverter
