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WPM9435A - MOSFET

Description

The WPM9435A is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • (4) (3) (2) (1) SOP-8L DD 87 DD 65 12 SS 34 SG Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.

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Datasheet Details

Part number WPM9435A
Manufacturer WillSEMI
File Size 914.71 KB
Description MOSFET
Datasheet download datasheet WPM9435A Datasheet

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Full PDF Text Transcription

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WPM9435A Single P-Channel, -30V, -6.3A, Power MOSFET WPM9435A Http://www.sh-willsemi.com VDS (V) -30 Typical RDS(on) (mΩ) 33 @ VGS=-10V 43 @ VGS=-4.5V Descriptions The WPM9435A is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM9435A is Pb-free.
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