Datasheet Summary
Dual P-Channel, -20V, -3A, Power MOSFET
VDS (V) -20
Typical Rds(on) (mΩ) 58@ VGS=-10V 71@ VGS=-4.5V 100@ VGS=-2.5V
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Descriptions
The WPMD2076 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching. .
Features
Pin configuration (Top view)
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC...