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WPMD2076 - MOSFET

Description

The WPMD2076 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • SOP-8L package design.

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Datasheet preview – WPMD2076

Datasheet Details

Part number WPMD2076
Manufacturer WillSEMI
File Size 730.83 KB
Description MOSFET
Datasheet download datasheet WPMD2076 Datasheet
Additional preview pages of the WPMD2076 datasheet.

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Full PDF Text Transcription

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WPMD2076 Dual P-Channel, -20V, -3A, Power MOSFET VDS (V) -20 Typical Rds(on) (mΩ) 58@ VGS=-10V 71@ VGS=-4.5V 100@ VGS=-2.5V WPMD2076 Http://www.sh-willsemi.com Descriptions The WPMD2076 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. .
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