WPMD3002 - MOSFET

Description

The WPMD3002 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8L package design.

WillSEMI

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Datasheet Details

Part number	WPMD3002
Manufacturer	WillSEMI
File Size	223.33 KB
Description	MOSFET
Datasheet	WPMD3002 Datasheet
Additional preview pages of the WPMD3002 datasheet.

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Full PDF Text Transcription

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WPMD3002 Dual P-Channel, -30V, -4.9A, Power MOSFET VDS (V) -30 Rds(on) (ȍ) 0.049@ VGS=-10V 0.070@ VGS=-4.5V WPMD3002 Http//:www.willsemi.com Descriptions The WPMD3002 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.

Published: Apr 30, 2017 |