PFU6N40EG - N-Channel MOSFET

Key Features

Originative New Design.
100% EAS Test.
Rugged Gate Oxide Technology.
Extremely Low Intrinsic Capacitances.
Remarkable Switching Characteristics.
Unequalled Gate Charge : 10.5 nC (Typ. ).
Extended Safe Operating Area.
Lower RDS(ON) : 0.7 Ω (Typ. ) @VGS=10V.

PFU6N40EG n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFU6N40EG
Manufacturer	Wing On
File Size	1.07 MB
Description	N-Channel MOSFET
Datasheet	PFU6N40EG Datasheet

Other Datasheets by Wing On

Part Number	Description
PFU6N70EG	N-Channel MOSFET
PFU6N70EGS-H	N-Channel MOSFET
PFU6N70FG	N-Channel MOSFET
PFU6N80G	N-Channel MOSFET
PFU60R540G	N-Channel Super Junction MOSFET
PFU65R540G	N-Channel Super Junction MOSFET
PFU65R900G	N-Channel Super Junction MOSFET
PFU1N60	N-Channel MOSFET
PFU1N70	N-Channel MOSFET
PFU2N100G	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PFU6N40EG / PFD6N40EG Green Package FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFU6N40EG/PFD6N40EG 400V N-Channel MOSFET BVDSS = 400 V RDS(ON) = 0.7 Ω ID = 4.