PFU6N70EG - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.50 Ω (Typ. ) @VGS=10V  Halogen Free & Short Lead PKG.

PFU6N70EG n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFU6N70EG
Manufacturer	Wing On
File Size	0.99 MB
Description	N-Channel MOSFET
Datasheet	PFU6N70EG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PFU6N70EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.50 Ω (Typ.) @VGS=10V  Halogen Free & Short Lead PKG APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) Green Package PFU6N70EG 700V N-Channel MOSFET BVDSS = 700 V RDS(on) = 1.80 Ω ID = 5.3 A I-PAK (TO-251) Drain  Gate  ● ◀▲ ● ●  Source 1 2 3 1.Gate 2. Drain 3.