PFU6N70EGS-H Datasheet | Wing On

Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 13.6 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.50 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) Green Package 700V N-Channel MOSFET BVDSS = 700 V RDS(on) = 1.50 Ω ID = 5.5 A I-PAK(TO-251) Short Lead Drain  Gate  - ◀▲ - -  Source 1.Gate 2. Drain 3....