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PFU6N70EGS-H - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 13.6 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.50 Ω (Typ. ) @VGS=10V  Halogen Free.

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Datasheet Details

Part number PFU6N70EGS-H
Manufacturer Wing On
File Size 866.38 KB
Description N-Channel MOSFET
Datasheet download datasheet PFU6N70EGS-H Datasheet
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Full PDF Text Transcription

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PFU6N70EGS-H 123 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 13.6 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.50 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) Green Package PFU6N70EGS-H 700V N-Channel MOSFET BVDSS = 700 V RDS(on) = 1.50 Ω ID = 5.5 A I-PAK(TO-251) Short Lead Drain  Gate  ● ◀▲ ● ●  Source 1.Gate 2. Drain 3.
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