PFU6N80G Datasheet | Wing On

Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 22.2 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.4 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors Green Package 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 2.4 Ω ID = 4.5 A Drain  Gate  - ◀▲ - -  Source I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3....