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PFU6N70FG - N-Channel MOSFET

Key Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 13.2 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ. ) @VGS=10V  Halogen Free.

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Datasheet Details

Part number PFU6N70FG
Manufacturer Wing On
File Size 805.15 KB
Description N-Channel MOSFET
Datasheet download datasheet PFU6N70FG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PFU6N70FG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 13.2 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors PFU6N70FG 700V N-Channel MOSFET Green Package BVDSS = 700 V RDS(on) = 2.0 Ω ID = 4.0 A Drain  Gate  ● ◀▲ ● ●  Source I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3.